MJD112-1G |
RFQ for MJD112-1G |
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| Technical/Catalog Information | MJD112-1G |
| Vendor | ON Semiconductor |
| Category | Discrete Semiconductor Products |
| Transistor Type | NPN - Darlington |
| Voltage - Collector Emitter Breakdown (Max) | 100V |
| Current - Collector (Ic) (Max) | 2A |
| Power - Max | 20W |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 2A, 3V |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 8mA, 2A |
| Frequency - Transition | 25MHz |
| Current - Collector Cutoff (Max) | 20A |
| Mounting Type | Through Hole |
| Package / Case | IPak, TO-251, DPak, VPak (3 straight leads + tab) |
| Packaging | Tube |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | MJD112 1G MJD1121G MJD112 1GOS ND MJD1121GOSND MJD112-1GOS |
| Product | Manufacturers | Pack | D/C |
| MJD112-1G | - | - | - |